El nitruro de Galio (Galio Nitruro, GaN) es una aleación binaria de semiconductores del III/V con una banda prohibida directa que se ha venido usando en diodos emisores de luz (LEDs) desde los años noventa. Este compuesto químico es un material muy duro que tiene una estructura cristalina Wurtzita. Su amplia banda prohibida de 3.4 eV le proporciona propiedades especiales para aplicaciones en optoelectrónica, dispositivos de alta potencia y dispositivos de alta frecuencia.

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Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in radiation environments. Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies.

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